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US 7,255,941 B2Granted
Ferroelectric film, ferroelectric capacitor, ferroelectric memory, piezoelectric element, semiconductor element, method of manufacturing ferroelectric film, and method of manufacturing ferroelectric capacitor
AssigneeSeiko Epson Corporation
InventorsTakeshi Kijima, Yasuaki Hamada, Eiji Natori, Koji Ohashi
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Abstract
A ferroelectric film is formed by an oxide that is described by a general formula AB1−xNbxO3. An A element includes at least Pb, and a B element includes at least one of Zr, Ti, V, W, Hf and Ta. The ferroelectric film includes Nb within the range of: 0.05≦x<1. The ferroelectric film can be used for any of ferroelectric memories of 1T1C, 2T2C and simple matrix types.
Claims6
A ferroelectric film that is described by (Pb1−y Ay)(B1−xNbx)O3,
- wherein an A element consists of an element selected from the group consisting of Ce, Pr, Nd, Pm, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb and Lu,
- wherein y is within the range of:
- 0<y≦0.2,
- wherein a B element comprises at least one of Zr, Ti, V, W, Hf and Ta, and
- wherein x is within the range of:
- 0.05≦x≦0.4.
3 more elements
Dependencies are inferred from the claim text.