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US 7,255,844 B2Granted
Systems and methods for synthesis of gallium nitride powders
AssigneeArizona Board of Regents
InventorsFernando A. Ponce, Rafael Garcia, Abigail Bell, Alan C. Thomas, Michael R. Stevens
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Abstract
A method of producing high quality GaN powder by combining high purity gallium and high purity ammonia in a tube reactor under controlled conditions. A reaction between the ammonia and gallium under the controlled conditions produces a porous gallium melt and to a full reaction, yielding high purity crystalline GaN powders with a stoichiometric nitrogen concentration and a hexagonal wurtzite structure.
Claims9
A method for making gallium nitride, said method comprising the steps of:
- subjecting gallium to a temperature between 100° C. and 700° C. in an ammonia flow to dissolve ammonia in the gallium;
- and then
- increasing the temperature to between 1000° C. and 1200° C. to react the ammonia with the gallium to produce a porous, crystalline structure characterized by:
- hexagonal columnar micro-crystals having a first distribution in size, and
- hexagonal platelets having a second distribution in size,
- wherein the first distribution is larger than the second distribution, and
- wherein both the micro-crystals and the platelets have a well defined wurtzite crystalline structure.
4 more elements
Gallium nitride powder comprising:
- hexagonal columnar micro-crystals having a first distribution in size, and
- hexagonal platelets having a second distribution in size,
- wherein the first distribution is larger than the second distribution, and
- wherein both the micro-crystals and the platelets have a wurtzite crystalline structure.
1 more element
Dependencies are inferred from the claim text.