Process apparatus and method for improving plasma production of an inductively coupled plasma
AssigneeTokyo Electron Limited
InventorsMirko Vukovic, Edward L. Sill
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AssigneeTokyo Electron Limited
InventorsMirko Vukovic, Edward L. Sill
Estimating the term…
A processing system for processing a substrate with a plasma comprises a processing chamber defining a processing space for containing a substrate to be processed with a plasma formed within the chamber. A dielectric window interfaces with the processing chamber proximate the processing space. A core element formed of a material having a high magnetic permeability is positioned outside of the chamber proximate the dielectric window, and an electrically conductive element surrounds a portion of the core element of high magnetic permeability. The conductive element, when electrical current is conducted thereby, is operable for coupling a magnetic flux into the chamber through the dielectric window for affecting a plasma in the processing space. The core element is configured for directing a portion of the magnetic flux in a direction toward the dielectric window to efficiently couple the channeled flux into the processing chamber through the dielectric window.
A processing system for processing a substrate with a plasma, comprising:
The processing chamber of system 5 wherein said metal oxide is selected from the group consisting of manganese oxide, zinc oxide, nickel oxide, and magnesium oxide.
Dependencies are inferred from the claim text.