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US 7,255,746 B2Granted
Nitrogen sources for molecular beam epitaxy
AssigneeFinisar Corporation
InventorsRalph H. Johnson, Jin K. Kim, James K. Guenter
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Abstract
MBE nitrogen sources of dimethylhydrazine, tertiarybutlyhydrazine, nitrogentrifloride, and NHx radicals. Those nitrogen sources are beneficial in forming nitrogen-containing materials on crystalline subtrates using MBE. Semiconductor lasers in general, and VCSEL in particular, that have nitrogen-containing layers can be formed using such nitrogen sources.
Claims19
A method of performing molecular beam epitaxy, comprising:
- locating a crystalline substrate in a chamber;
- heating the crystalline substrate to a temperature suitable for MBE epitaxial growth;
- evacuating the chamber to a pressure suitable for MBE epitaxial growth;
- and
- injecting tertiarybutylhydrazine into the chamber and onto a surface of the crystalline substrate.
2 more elements
A method of fabricating a vertical cavity surface emitting laser comprising the steps of:
- locating a crystalline substrate in a chamber;
- heating the crystalline substrate to a temperature suitable for MBE epitaxial growth;
- evacuating the chamber to a pressure suitable for MBE epitaxial growth;
- and
- injecting tertiarybutylhydrazine into the chamber and onto a surface of the crystalline substrate.
2 more elements
A method of fabricating a semiconductor laser, comprising the steps of:
- locating a crystalline substrate in a chamber;
- heating the crystalline substrate to a temperature suitable for MBE epitaxial growth;
- evacuating the chamber to a pressure suitable for MBE epitaxial growth;
- growing at least one semiconductor layer on the crystalline substrate;
- and
- injecting tertiarybutylhydrazine into the chamber and onto a surface of the crystalline substrate.
3 more elements
Dependencies are inferred from the claim text.