Iridium oxide nanowires and method for forming same

An iridium oxide (IrOx) nanowire structure comprising:

• a substrate;
• a non-continuous growth promotion film, with a surface, overlying the substrate;
• and
• IrOx nanowires grown from the growth promotion film surface.

An iridium oxide (IrOx) nanowire electrical interconnection comprising:

• a substrate;
• a first electrically conductive electrode formed on the substrate;
• a second electrically conductive electrode formed on the substrate;
• and
• an IrOx nanowire having a diameter of less than 1000 Å, with a proximal end connected to the first electrode and a distal end connected to the second electrode.

A method for forming an iridium oxide (IrOx) nanowire electrical interconnect, the method comprising:

• providing a substrate;
• providing a first and second electrically conductive electrode overlying the substrate;
• supplying a plurality of IrOx nanowires, each having a diameter of less than 1000 Å;
• depositing the IrOx nanowires in a solvent;
• spreading the solution of nanowires over the substrate, covering the first and second electrodes;
• performing a first anneal to evaporate the solvent;
• forming an IrOx nanowire electrical interconnection between the first and second electrodes;
• and
• performing a second anneal, forming an alloy between the electrodes and the nanowire.

A method for forming an iridium oxide (IrOx) nanowire electrical interconnect, the method comprising:

• providing a substrate;
• supplying a plurality of IrOx nanowires, each having a diameter of less than 1000 Å;
• depositing the IrOx nanowires in a solvent, creating a nanowire solution;
• spreading the nanowire solvent over the substrate;
• evaporating the nanowire solution;
• depositing an electrically conductive film overlying the nanowire-covered substrate;
• patterning the electrically conductive film to form a first and a second electrode connected by an IrOx nanowire.

A method for forming an iridium oxide (IrOx) nanowire electrical interconnect, the method comprising:

• providing a substrate;
• providing a first and second electrically conductive electrode overlying the substrate;
• forming a growth promotion film with non-continuous surfaces overlying the first electrode;
• introducing a (methylcyclopentadienyl)(1,5-cyclooctadiene)iridium(I) precursor;
• supplying an electrical field between the first and second electrodes;
• using a metalorganic chemical vapor deposition (MOCVD) process, growing IrOx nanowires from the growth promotion film surface on the first electrode;
• and
• in response to the electrical field, orienting the growth of the IrOx nanowires toward to intersect the second electrode.