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US 7,253,788 B2Granted
Mixed-signal systems with alternating impedance electromagnetic bandgap (AI-EBG) structures for noise suppression/isolation
AssigneeGeorgia Tech Research Corporation
InventorsJinwoo Choi, Madhavan Swaminathan, Vinu Govind
Life of this patent
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Abstract
Alternating impedance electromagnetic bandgap (AI-EBG) structures, systems incorporating AI-EBG structures, and methods of making AI-EBG structures, are disclosed.
Claims17
A structure comprising:
- a first layer, wherein the first layer comprises a signal layer;
- a second layer disposed on a back side of the first layer, wherein the second layer comprises a dielectric layer;
- a third layer disposed on a back side of the second layer, wherein the third layer comprises a solid metal plane;
- a fourth layer disposed on a back side of the third layer, wherein the fourth layer comprises a dielectric layer;
- and
- a fifth layer disposed on a back side of the fourth layer, wherein the fifth layer comprises an alternating impedance electromagnetic bandgap (AI-EBG) plane, the AI-EBG plane comprising:
- a plurality of first elements disposed on a first plane, each first element comprising a first metal layer, wherein each first element has a rectangular shape;
- and
- a second element connecting each first element to an adjacent first element at a position adjacent to the corner of the first element, the second element being disposed on the first plane, the second element comprising the first metal layer, wherein the first elements and second elements substantially filter electromagnetic waves to a stopband floor of about −60 dB to about −140 dB in a bandgap of about 100 MHz to about 50 GHz having a width selected from about 1 GHz, 2 GHz, 3 GHz, 5 GHz, 10 GHz, 20 GHz, and 30 GHz, and having a center frequency positioned at a frequency from about 1 GHz to 37 GHz.
6 more elements
A method of fabricating structure having an alternating impedance electromagnetic bandgap (AI-EBG) plane, comprising:
- providing a first layer, wherein the first layer comprises a signal layer;
- disposing a second layer on a back side of the first layer, wherein the second layer comprises a dielectric layer;
- disposing a third layer on a back side of the second layer, wherein the third layer comprises a solid metal plane;
- disposing a fourth layer on a back side of the third layer, wherein the fourth layer comprises a dielectric layer;
- and
- disposing a fifth layer on a back side of the fourth layer, wherein the fifth layer comprises an alternating impedance electromagnetic bandgap (Al-EBG) plane.
3 more elements
Dependencies are inferred from the claim text.