Air-gap type thin-film bulk acoustic resonator and fabrication method therefor
AssigneeSamsung Electronics Co., Ltd.
InventorsIn-sang Song, Byeoung-ju Ha, Yun-kwon Park, Jong-seok Kim
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Abstract
An air-gap type thin-film bulk acoustic resonator. The air-gap type thin-film bulk acoustic resonator has a substrate having a cavity formed on a predetermined portion of an upper surface thereof; a resonance part having a structure of a first electrode, a piezoelectric substance, and a second electrode deposited in order and formed over the upper side of the cavity; and at least one via hole penetrating a lower surface of the substrate and connecting to the cavity.
Claims10
An air-gap type thin-film bulk acoustic resonator, comprising:
- a substrate having a cavity formed at a predetermined portion of an upper surface thereof;
- a resonance part comprising a first electrode, a piezoelectric substance, and a second electrode deposited in order, the resonance part being spaced at a predetermined distance from a lower surface of the cavity;
- and
- at least one via hole penetrating a lower surface of the substrate and connecting to the cavity.
A method for fabricating an air-gap type thin-film bulk acoustic resonator which comprises:
- (a) depositing an insulation layer over an upper surface of a substrate;
- (b) depositing a first electrode, a piezoelectric layer, and a second electrode in order over the insulation layer to form a resonance part;
- (c) forming at least one via hole penetrating a lower surface of the substrate;
- and
- (d) etching the substrate and insulation layer formed below the resonance part through the via hole to form a cavity.
Dependencies are inferred from the claim text.