Bandgap reference designs with stacked diodes, integrated current source and integrated sub-bandgap reference
AssigneeNational Semiconductor Corporation
InventorsJames T. Doyle, Dae Woon Kang, Martin Dermody
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AssigneeNational Semiconductor Corporation
InventorsJames T. Doyle, Dae Woon Kang, Martin Dermody
Estimating the term…
The performance of a bandgap reference circuit is improved by increasing the ΔVBE, and thereby correspondingly decreasing the input sensitivity of the error amplifier in the control loop. The ΔVBE can be increased by presenting stacked diode configurations at the amplifier inputs, by increasing the diode ratio presented at the amplifier inputs, and by providing a higher current in the CTAT leg than in the PTAT leg. The stacked diode configuration is achieved by producing isolated diodes with a triple well CMOS process. The stacked diode configuration and the triple well CMOS process also permit the input stage of the amplifier to use N-channel transistors operating in the threshold region.
A bandgap reference circuit, comprising:
A bandgap reference circuit, comprising:
A bandgap reference circuit, comprising:
A bandgap reference circuit, comprising:
Dependencies are inferred from the claim text.