Semiconductor chip production method, semiconductor device production method, semiconductor chip, and semiconductor device

A semiconductor chip, comprising:

• a semiconductor substrate having a front surface and a rear surface;
• a functional device provided in the front surface of the semiconductor substrate;
• and
• a through-electrode electrically connected to the functional device and provided in a through-hole disposed on a lateral side of the functional device as extending thicknesswise through the semiconductor substrate, the through-electrode electrically connecting a front side and a rear side of the semiconductor substrate,
• wherein the through-electrode includes:
• a front side electrode disposed in a front side recess which is provided in the front surface of the semiconductor substrate and partly constitutes the through-hole;
• and
• a rear side electrode disposed in a rear side recess which is provided in the rear surface of the semiconductor substrate in communication with the front side recess and partly constitutes the through-hole,
• wherein the rear side recess occupies a major area of the rear surface including an area associated with a front side portion provided with the front side electrode.

A semiconductor device, comprising plural semiconductor chips stacked thicknesswise,

• wherein the semiconductor chips each include:
• a semiconductor substrate having a front surface and a rear surface;
• a functional device provided in the front surface of the semiconductor substrate;
• and
• a through-electrode electrically connected to the functional device and provided in a through-hole disposed on a lateral side of the functional device as extending thicknesswise through the semiconductor substrate, the through-electrode electrically connecting a front side and a rear side of the semiconductor substrate,
• wherein the through-electrode includes:
• a seed layer having a portion disposed in a depthwise middle portion of the through-hole as closing the through-hole;
• a front side electrode disposed on a side of the through-hole closing portion of the seed layer closer to the front surface in the through-hole;
• and
• a rear side electrode disposed on a side of the through-hole closing portion of the seed layer closer to the rear surface in the through-hole.

A semiconductor device, comprising plural semiconductor chips stacked thicknesswise,

• wherein the semiconductor chips each includes:
• a semiconductor substrate having a front surface and a rear surface;
• a functional device provided in the front surface of the semiconductor substrate;
• and
• a through-electrode electrically connected to the functional device and provided in a through-hole disposed on a lateral side of the functional device as extending thicknesswise through the semiconductor substrate, the through-electrode electrically connecting a front side and a rear side of the semiconductor substrate,
• wherein the through-electrode includes:
• a front side electrode disposed in a front side recess which is provided in the front surface of the semiconductor substrate and partly constitutes the through-hole;
• and
• a rear side electrode disposed in a rear side recess which is provided in the rear surface of the semiconductor substrate in communication with the front side recess and partly constitutes the through-hole,
• wherein the rear side recess occupies a major area of the rear surface including an area associated with the front side portion provided with the front side electrode.