US 7,253,522 B2 · Integrated capacitor for RF applications with Ta adhesion layer

Abstract

A precision RF passive component including: a silicon substrate; a first dielectric layer deposited above the silicon substrate; a first metal layer formed above the first dielectric layer; a second dielectric layer formed above the first metal layer; and a second metal layer formed above the second dielectric layer. In one embodiment a passivation layer is added above the second metal layer. In an exemplary embodiment the first metal layer includes a first adhesion layer, a metal sub-layer, and a second adhesion layer; and the second dielectric layer includes a first diffusion barrier layer, a dielectric sub-layer second diffusion barrier. In an exemplary embodiment, the metal sub-layer includes copper. In another exemplary embodiment the dielectric sub-layer includes SiO2 or Si3N4 between diffusion barrier layers including SiN.

Claims16

Dependent claims

A precision RF passive component comprising:

a substrate;
a first dielectric layer deposited above said substrate;
a first metal layer formed above said first dielectric layer;
a second dielectric layer formed above said first metal layer;
and
a second metal layer formed above said second dielectric layer,
wherein said first metal layer comprises:
a first adhesion layer;
a metal sub-layer deposited above the first adhesion layer;
and a second adhesion layer deposited above the metal sub-layer,
at least one of said first adhesion layer of said first metal layer and said second adhesion layer of said first metal layer comprising tantalum.

8 more elements

Dependencies are inferred from the claim text.

Integrated capacitor for RF applications with Ta adhesion layer

Life of this patent

Integrated capacitor for RF applications with Ta adhesion layer

Life of this patent

Abstract

Claims16