Methods for making integrated-circuit wiring from copper, silver, gold, and other metals

An integrated-circuit assembly comprising:

• a first wiring level;
• a second wiring level electrically coupled to the first wiring level via a substantially vertical conductor;
• and
• a diffusion barrier around at least a portion of the first wiring level and at least a portion of the second wiring level, wherein the diffusion barrier is a single continuous layer providing continuous multi-level coverage of at least a portion of the first wiring level, the substantially vertical conductor, and at least a portion of the second wiring level.

An integrated-circuit assembly comprising:

• a first transistor region;
• a first wiring level electrically connected to the first transistor region by a first substantially vertical conductor;
• a second wiring level electrically connected to the first wiring level by a second substantially vertical conductor;
• and
• a diffusion barrier having a first continuous portion completely surrounding at least a portion of the first wiring level and a second continuous portion completely surrounding at least a portion of the second wiring level, wherein the diffusion barrier is a single continuous layer.

An integrated-circuit assembly comprising:

• a first transistor region;
• a first wiring level electrically connected to the first transistor region by a first substantially vertical conductor;
• a second wiring level electrically connected to the first wiring level by a second substantially vertical conductor;
• a diffusion barrier having a first continuous portion completely surrounding at least a portion of the first wiring level and a second continuous portion completely surrounding at least a portion of the second wiring level, wherein the diffusion barrier is a single continuous layer;
• and
• a continuously formed insulation surrounding and contacting the first and second continuous portions of the diffusion barrier.

An integrated-circuit assembly comprising:

• a first transistor region;
• a first wiring level electrically connected to the first transistor region by a first substantially vertical conductor;
• a second wiring level electrically connected to the first wiring level by a second substantially vertical conductor;
• a continuously formed diffusion barrier having a first continuous portion completely encircling at least a portion of the first wiring level, a second continuous portion completely encircling at least a portion of the second wiring level, a third continuous portion completely encircling at least a portion of the first substantially vertical conductor, and a fourth continuous portion completely encircling at least a portion of the second substantially vertical conductor, wherein the diffusion barrier is a single continuous layer;
• and
• a single continuously formed insulation layer completely encircling and contacting the first and second portions of the diffusion barrier.

An integrated-circuit assembly comprising:

• a first transistor region;
• a first wiring level electrically connected to the first transistor region by a first substantially vertical conductor;
• a second wiring level electrically connected to the first wiring level by a second substantially vertical conductor;
• continuously formed means for inhibiting diffusion and for completely encircling at least a portion of the first wiring level and a portion of the second wiring level, wherein the continuously formed means for inhibiting diffusion is a single continuous layer;
• and
• continuously formed means for inhibiting electrical conduction and for completely encircling at least first and second portions of the diffusion barrier.