US 7,253,501 B2Granted

High performance metallization cap layer

AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.

InventorsHsien-Ming Lee, Jing-Cheng Lin, Shing-Chyang Pan, Ching-Hua Hsieh, Chao-Hsien Peng, Cheng-Lin Huang, Li-Lin Su, Shau-Lin Shue

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Abstract

A semiconductor device having a nonconductive cap layer comprising a first metal element. The nonconductive cap layer comprises a first metal nitride, a first metal oxide, or a first metal oxynitride over conductive lines and an insulating material between the conductive lines. An interface region may be formed over the top surface of the conductive lines, the interface region including the metal element of the cap layer. The cap layer prevents the conductive material in the conductive lines from migrating or diffusing into adjacent subsequently formed insulating material layers. The cap layer may also function as an etch stop layer.

Claims13

Dependent claims

A method of manufacturing a semiconductor device, the method comprising:

providing a workpiece;
forming a first insulating layer over the workpiece;
forming at least one first conductive line in the first insulating layer;
forming a first cap layer over the first insulating layer and the at least one first conductive line, wherein forming the first cap layer comprises forming nonconductive material comprised of at least a first metal element;
forming at least one second insulating layer over the first cap layer;
forming at least one second conductive line in the at least one second insulating layer;
and
forming at least one second cap layer over at least one second insulating layer and at least one second conductive line, wherein the at least one second cap layer is nonconductive and comprises at least a second metal element.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application: 10/909,980Filed 3 Aug 2004
Published: US 2006/0027922 A19 Feb 2006
Granted: 7 Aug 2007
Term ends: Not estimatedThe source records don’t support an estimate.

Classification6 codes

H10W 20/077
Of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers: on sidewalls or on…
H10W 20/037
In openings in dielectrics: the barrier, adhesion or liner layers being on top of a main fill metal
H10W 20/055
Of conductive barrier, adhesion or liner layers: by formation methods other than physical vapour deposition [PVD], chemical vapour deposition…
H10W 20/47
Characterised by their insulating parts: comprising two or more dielectric layers having different properties, e.g. different dielectric constants