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US 7,253,500 B2Granted
Semiconductor wafer and a method for manufacturing a semiconductor wafer
AssigneeKabushiki Kaisha Toshiba
InventorsMasao Iwase, Soichi Nadahara
Life of this patent
Estimating the term…
Abstract
A semiconductor wafer includes (a) a first principal side and a second principal side opposite to each other, (b) a first bevel contour and a second bevel contour provided at an outer periphery of the first principal side and the second principal side, (c) a first recess formed in the first bevel contour, and (d) a first type of ID mark configured by a protruding dot provided on a bottom face of the first recess.
Claims5
A semiconductor wafer comprising:
- a first principal side and a second principal side opposite to each other;
- a first bevel contour and a second bevel contour provided at an outer peripheral part of the first principal side and the second principal side;
- a first type of ID mark of protruding dots provided on at least one of the first bevel contour and the second bevel contour;
- and
- a second type of ID mark of recessed dots being the same code as the first type of ID mark, and provided on at least one of the first bevel contour and the second bevel contour.
2 more elements
Dependencies are inferred from the claim text.