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US 7,253,479 B2Granted
Semiconductor device with cavity and method of manufacture thereof
AssigneeKabushiki Kaisha Toshiba
InventorHiroyuki Sugaya
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Abstract
A semiconductor device is provided with a substrate with a cavity inside, the substrate including a device formation area located above the cavity, a plurality of trenches formed in the substrate to communicate with the cavity and surround the device formation area, and an oxide film formed around each of the trenches to continuously surround the device formation area.
Claims17
A semiconductor device comprising:
- a substrate with a cavity inside, the substrate including a device formation area located above the cavity;
- a plurality of trenches formed in the substrate to communicate with the cavity and surround the device formation area;
- and
- an oxide film as a device separation region formed around each of the trenches to continuously surround the device formation area.
1 more element
A method of manufacturing a semiconductor substrate comprising:
- forming a cavity inside a substrate;
- forming a plurality of first trenches in a surface portion of the substrate so that each of the first trenches communicates with the cavity;
- and
- forming an oxide film as a device separation region to continuously surround the surface portion of the substrate above the cavity by oxidizing the substrate around the first trenches.
1 more element
Dependencies are inferred from the claim text.