Semiconductor device

Abstract

The semiconductor device comprises: a semiconductor substrate (N+ substrate 110) containing a first conductivity type impurity implanted therein; a second conductivity type impurity-implanted layer (P+ implanted layer 114) at relatively high concentration, formed on the semiconductor substrate (N+ substrate 110); a second conductivity type impurity epitaxial layer (P− epitaxial layer 111) at relatively low concentration, formed on the second conductivity type impurity-implanted layer (P+ implanted layer 114); and a field effect transistor 100 (N-channel type lateral MOSFET 100) composed of a pair of impurity diffusion regions (N+ source diffusion layer 115 and N− drain layer 116) provided in the second conductivity type impurity epitaxial layer (P− epitaxial layer 111) and a gate electrode 117 provided over a region sandwiched with the pair of impurity diffusion regions (N+ source diffusion layer 115 and N− drain layer 116).

Dependencies are inferred from the claim text.