Power transistor cell and power transistor component with fusible link
AssigneeInfineon Technologies AG
InventorCarsten Schäffer
Life of this patent
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AssigneeInfineon Technologies AG
InventorCarsten Schäffer
Estimating the term…
Transistor cells (2) of a power transistor component are in each case provided with a gate conductor structure that forms a gate electrode (52) in sections and is connected via a gate cell terminal (43) to a gate wiring line (81) led to a gate terminal (44) of the power transistor component (1). The gate conductor structure (5) has a desired fusible section (51) with an increased resistance, which is arranged within a cavity. The resistance of the desired fusible section (51) can be set in such a way that, in the event of a current loading of the magnitude of a value that is typical of a defective gate dielectric (41), the gate conductor section (5) is interrupted in the desired fusible section (51) and the gate electrode (52) is disconnected from the gate wiring line (81). The power transistor component can be produced with high yield and has a smaller number of failures during application operation.
A power transistor cell formed in a semiconductor substrate, the power transistor cell comprising:
A power transistor component comprising:
A power transistor component comprising:
Dependencies are inferred from the claim text.