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US 7,253,474 B2Granted
Quasi-vertical semiconductor component
AssigneeInfineon Technologies AG
InventorsMarie Denison, Hannes Estl
Life of this patent
Estimating the term…
Abstract
A quasi-vertical semiconductor component in which, by variation of the layout, the process or the wiring of inner cells, a compensation for a voltage drop along a buried layer is provided in order thus to ensure a similar operating point of the individual inner cells in the well. Therefore, the disadvantages brought about by a voltage drop in the buried layer are ultimately overcome.
Claims7
A quasi-vertical semiconductor component, comprising:
- a surface;
- a semiconductor substrate;
- a well;
- at least three inner cells disposed in said well;
- a buried layer disposed between said well and said semiconductor substrate;
- a sinker zone disposed outside a region of said inner cells and to which a sinker voltage is applied, said sinker zone connecting said buried layer to said surface of the semiconductor component;
- and
- said inner cells having substantially similar values for forward currents and reverse currents being independent of a positional relationship to said sinker zone by making a spacing distance between said inner cells which are disposed farther away from said sinker zone larger than a spacing distance between said inner cells which are disposed closer to said sinker zone.
5 more elements
Dependencies are inferred from the claim text.