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US 7,253,471 B2Granted
Semiconductor structure having thick stabilization layer
AssigneeInfineon Technologies AG
InventorFranz Hirler
Life of this patent
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Abstract
A semiconductor structure has a semiconductor substrate (3, 4), on/in whose top side a structure comprising semiconductor layers, metal layers and insulator layers (5) is applied/impressed. An as far as possible contiguous stabilization layer (6, 10) made of metal and/or passivation material is applied on the applied/impressed metal/semiconductor/insulator layer structure (5).
Claims8
A semiconductor structure comprising:
- a semiconductor substrate;
- a semiconductor and insulator layer structure applied on the semiconductor substrate;
- a top contacting layer contacting at least one of the semiconductor and insulator layer structure and a top side of the semiconductor substrate;
- a bottom contacting layer contacting a bottom side of the semiconductor substrate;
- and
- a substantially contiguous stabilization layer applied on the semiconductor and insulator layer structure, wherein the thickness of the stabilization layer is about one third or more the thickness of the semiconductor substrate and is in the range of 30 μm to 300 μm, and wherein the stabilization layer is substantially metal.
3 more elements
Dependencies are inferred from the claim text.