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US 7,253,468 B2Granted
Flash memory and methods of fabricating the same
AssigneeDongbu Electronics Co., Ltd.
InventorJin Hyo Jung
Life of this patent
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Abstract
Flash memory and methods of fabricating the same are disclosed. An illustrated example flash memory includes a first source formed within a semiconductor substrate; an epitaxial layer formed on an upper surface of the semiconductor substrate; an opening formed within the epitaxial layer to expose the first source; a floating gate device formed inside the opening; and a select gate device formed on the epitaxial layer at a distance from the floating gate device.
Claims18
A flash memory comprising:
- a first source in a semiconductor substrate;
- an epitaxial layer on an upper surface of the semiconductor substrate;
- an opening in the epitaxial layer to expose the first source;
- a floating gate device inside the opening comprising:
- a tunneling oxide layer along side and bottom walls of the opening;
- floating gates on the tunneling oxide layer between the side walls and the bottom wall of the opening;
- a dielectric layer on the floating gates and on the tunneling oxide layer between the floating gates;
- and
- a control gate on the dielectric layer;
- and
- a select gate device on the epitaxial layer at a distance from the floating gate device, wherein the select gate device has a select gate having a height substantially identical with a height of the control gate.
8 more elements
Dependencies are inferred from the claim text.