Non-volatile semiconductor memory devices
AssigneeSamsung Electronics Co., Ltd.
InventorsChang-Hyun Lee, Jung-Dal Choi, Byoung-Woo Ye
Life of this patent
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Abstract
A non-volatile memory device includes a semiconductor substrate, a tunneling insulating layer, a charge storage layer, a blocking insulating layer, and a gate electrode. The tunneling insulating layer is on the substrate and has a first dielectric constant. The charge storage layer is on the tunneling insulating layer. The blocking insulating layer is on the charge storage layer and has a second dielectric constant which is greater than the first dielectric constant of the tunneling insulting layer. The gate electrode is on the blocking insulating layer, and at least a portion of the gate electrode adjacent to the blocking layer has a higher work-function than polysilicon.
Claims24
A non-volatile memory device comprising:
- a semiconductor substrate;
- a tunneling insulating layer having a first dielectric constant on the substrate;
- a charge storage layer on the tunneling insulating layer;
- a blocking insulating layer on the charge storage layer, the blocking insulating layer having a second dielectric constant which is greater than the first dielectric constant of the tunneling insulating layer;
- and
- a gate electrode on the blocking insulating layer, wherein at least a portion of the gate electrode adjacent to the blocking insulating layer has a work-function of at least 4 eV.
A non-volatile memory device comprising:
- a semiconductor substrate;
- a plurality of parallel active regions on the semiconductor substrate;
- a plurality of parallel memory gate electrodes that intersect and pass over the active regions;
- a tunneling insulating layer having a first dielectric constant;
- a blocking insulating layer having a second dielectric constant that is greater than the first dielectric constant of the tunneling insulating layer;
- and
- a charge storage layer, wherein the tunneling insulating layer, the charge storage layer, and the blocking insulating layer are between the intersections of the active regions and the memory gate electrodes, and wherein at least portions of the memory gate electrodes adjacent to the blocking insulating layers have a work-function of at least 4 eV.
A non-volatile memory device comprising:
- a semiconductor substrate;
- a tunneling insulating layer on the semiconductor substrate;
- a charge storage layer on the tunneling insulating layer;
- a blocking insulating layer on the charge storage layer, the blocking insulating layer having a dielectric constant which is greater than that of the tunneling insulating layer;
- and
- a metal gate electrode directly on the blocking insulating layer, wherein the work function of the metal gate electrode is at least 4 eV.
Dependencies are inferred from the claim text.