Snapshot CMOS image sensor with high shutter rejection ratio

A pixel image sensor integrated circuit fabricated on a substrate comprising:

• an array of pixel image sensors having a high shutter rejection ratio fabricated on said substrate, each pixel image senor comprising:
• a photon sensing area for receiving photons and converting said photons to photoelectrons,
• an isolation barrier placed at a relatively great depth from a surface of said substrate and beneath a storage node and storage node control transistor switches of said pixel image sensor, and not beneath said photon sensing area to prevent substrate charge leakage caused by photoelectrons generated in said substrate beneath said photon sensing area of said pixel image sensor from drifting to said storage node, and
• a diffusion well placed in said surface of said substrate to contact said isolation barrier and connected to a first biasing voltage to channel said photoelectrons away from said storage node.

A pattern recognition system for detecting moving objects without motion artifacts comprising:

• a pixel image sensor integrated circuit fabricated on a substrate comprising:
• an array of pixel image sensors having a high shutter rejection ratio fabricated on said substrate, each pixel image senor comprising:
• a photon sensing area for receiving photons and converting said photons to photoelectrons,
• an isolation barrier placed at a relatively great depth from a surface of said substrate and beneath a storage node and storage node control transistor switches of said pixel image sensor and not beneath said photon sensing area to prevent substrate charge leakage caused by photoelectrons generated in said substrate beneath said photon sensing area of said pixel image sensor from drifting to said storage node, and
• a diffusion well placed in said surface of said substrate to contact said isolation barrier and connected to a first biasing voltage to channel said photoelectrons away from said storage node.

A method for forming a pixel image sensor having a high shutter rejection ratio comprising the steps of:

• providing a substrate doped with an impurity of the first conductivity type;
• growing a lightly doped epitaxial layer of said first conductivity type onto a surface of said substrate;
• forming a photon sensing area for receiving photons and converting said photons to photoelectrons;
• forming an isolation barrier at a relatively great depth from a surface of said substrate and beneath a storage node and storage node control transistor switches of said pixel image sensor and not beneath said photon sensing area to prevent substrate charge leakage caused by photoelectrons generated in said substrate beneath said photon sensing area of said pixel image sensor from drifting to said storage node;
• forming a diffusion well placed in said surface of said substrate to contact said isolation barrier;
• and
• connecting said diffusion well to a first biasing voltage to channel said photoelectrons away from said storage node.