CMOS image sensor
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTzu-Hsuan Hsu, Dun-Nian Yaung, Wen-De Wang, Ho-Ching Chien, Shou-Gwo Wuu
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Abstract
A complementary metal oxide semiconductor field effect transistor (CMOS-FET) image sensor. An active photosensing pixel is formed on a substrate. At least one side of the pixel has a width equal to or less than approximately 3 μm. At least one dielectric layer is disposed on the substrate covering the pixel. A color filter is disposed on the least one dielectric layer. A microlens array is disposed on the color filter of the pixel, and the sum of the thickness of all dielectric layers and the color filter divided by the pixel width is equal to or less than approximately 1.87.
Claims24
An image sensor device comprising:
- an array of active photosensing pixels on a substrate, at least one side of each pixel having a pixel width equal to or less than 3 μm;
- at least one dielectric layer disposed on the substrate covering the array;
- and
- a color filter on the least one dielectric layer;
- wherein the sum of the thickness of all dielectric layers and the color filter divided by the pixel width is equal to or less than about 1.87 such that crosstalk of each pixel is approximately lass than 50% at an oblique incident angle of 15°.
An image sensor device comprising:
- an array of active photosensing pixels on a substrate, each pixel having an area equal to or less than approximately 10 μm2;
- at least one dielectric layer disposed on the substrate covering the array;
- and
- a color filter on the least one dielectric layer;
- wherein the sum of the thickness of all dielectric layers and the color filter divided by the pixel width is equal to or less than about 1.87 such that crosstalk of each pixel is approximately less than 50% at an oblique incident angle of 15°.
Dependencies are inferred from the claim text.