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US 7,253,451 B2Granted
III-nitride semiconductor light emitting device
AssigneeEpivalley Co., Ltd.
InventorsTae-Kyung Yoo, Eun Hyun Park
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Abstract
The present invention relates to an III-nitride semiconductor light emitting device in which a single layer or plural layers made of SixCyNz(x≧0, y≧0, x+y>0, z>0) are inserted into or under an active layer and it is directed to a technology in which Al(x)Ga(y)In(1−x−y)N(0≦x≦1, 0≦y≦1, 0≦x+y≦1) of the hexagonal structure and SixCyNz(x≧0, y≧0, x+y>0, z>0) of the hexagonal structure are combined together in view of the properties of the SixCyNz(x≧0, y≧0, x+y>0, z>0) material.
Claims25
A III-nitride semiconductor light emitting device comprising:
- a substrate;
- and,
- a plurality of nitride semiconductor layers being grown on the substrate and having an active layer for generating photons through recombination of electrons and holes,
- wherein the active layer includes a light emitting layer that generates photons through recombination of electrons and holes, and a barrier layer which is grown on the light emitting layer and confines the electrons and holes to the light emitting layer, and
- wherein the light emitting layer includes a SixCyNz(x≧0, y≧0, x+y>0, z>0) layer, and a nitride semiconductor layer which is grown on the SixCyNz(x≧0, y≧0, x+y>0, z>0) layer and includes Ga and N.
2 more elements
a III-nitride semiconductor light emitting device comprising:
- a substrate;
- a plurality of nitride semiconductor layers being grown on the substrate and having an active layer with one or more light emitting layers emitting light through recombination of electrons and holes;
- and,
- a SixCyNz(x≧0, y≧0, x+y>0, z>0) layer which is located under a light emitting layer located at the farthest from the substrate among the one or more light emitting layers and is not brought into contact with the substrate.
1 more element
Dependencies are inferred from the claim text.