Display device having a thin film transistor

A display device comprising:

• a substrate;
• a semiconductor island formed over the substrate;
• a gate insulating film formed over the semiconductor island, the gate insulating film having a first opening;
• a gate electrode comprising molybdenum formed over the gate insulating film;
• a first interlayer insulating film formed over the gate insulating film and the gate electrode, said first interlayer insulating film having a second opening;
• a conductive layer contacting one of a source region and a drain region of said semiconductor island via the first opening of the gate insulating film and said second opening of the first interlayer insulating film;
• a second interlayer insulating film comprising an organic resin and covering said first interlayer insulating film and said conductive layer wherein said second interlayer insulating film has a third opening;
• and
• a transparent pixel electrode formed over said second interlayer insulating film and electrically connected to said one of the source region and the drain region via said conductive layer wherein said transparent pixel electrode contacts said conductive layer via said third opening of the second interlayer insulating film,
• wherein said third opening of the second interlayer insulating film completely covers said second opening of the first interlayer insulating film and the first opening of the gate insulating film.

A display device comprising:

• a semiconductor island formed over an insulating surface, said semiconductor island having at least a channel region and source and drain regions;
• a gate insulating film formed over said semiconductor island, the gate insulating film having a first opening;
• a gate electrode comprising molybdenum formed over said channel region with said gate insulating film interposed therebetween wherein said source and drain regions are formed in a self-alignment manner with said gate electrode as a mask;
• a first interlayer insulating film formed over said gate electrode and said semiconductor island, said first interlayer insulating film having a second opening;
• a conductive layer contacting one of the source region and the drain region via the first opening of the gate insulating film and said second opening of the first interlayer insulating film;
• a second interlayer insulating film comprising an organic resin and covering said first interlayer insulating film and said conductive layer wherein said second interlayer insulating film has a third opening;
• and
• a transparent pixel electrode formed over said second interlayer insulating film and electrically connected to said one of the source region and the drain region via said conductive layer wherein said transparent pixel electrode contacts said conductive layer via said third opening of the second interlayer insulating film,
• wherein said third opening of the second interlayer insulating film overlaps said second opening of the first interlayer insulating film and the first opening of the gate insulating film.

A display device comprising:

• a semiconductor island formed over an, insulating surface, said semiconductor island having at least a channel region and source and drain regions;
• a gate insulating film formed over said semiconductor island, the gate insulating film having a first opening;
• a gate electrode comprising molybdenum formed over said channel region with said gate insulating film interposed therebetween wherein said source and drain regions are formed in a self-alignment manner with said gate electrode as a mask;
• a first interlayer insulating film formed over said gate electrode and said semiconductor island, said first interlayer insulating film having a second opening;
• a conductive layer contacting one of the source region and the drain region via the first opening of the gate insulating film and said second opening of the first interlayer insulating film;
• a second interlayer insulating film comprising an organic resin and covering said first interlayer insulating film and said conductive layer wherein said second interlayer insulating film has a third opening;
• and
• a transparent pixel electrode formed over said second interlayer insulating film and electrically connected to said one of the source region and the drain region via said conductive layer wherein said transparent pixel electrode contacts said conductive layer via said third opening of the second interlayer insulating film,
• wherein said third opening of the second interlayer insulating film completely covers said second opening of the first interlayer insulating film and the first opening of the gate insulating film.

A display device comprising:

• a semiconductor island formed over an insulating surface, said semiconductor island having at least a channel region and a pair of impurity regions of an N-type conductivity or a P-type conductivity;
• a gate insulating film formed over said semiconductor island, the gate insulating film having a first opening;
• a gate electrode comprising molybdenum formed over said channel region with said gate insulating film interposed therebetween wherein said pair of impurity regions are formed in a self-alignment manner with said gate electrode as a mask;
• a first interlayer insulating film formed over said gate electrode and said semiconductor island, said first interlayer insulating film having a second opening;
• a conductive layer contacting one of said pair of impurity regions via the first opening of the gate insulating film and said second opening of the first interlayer insulating film;
• a second interlayer insulating film comprising an organic resin and covering said first interlayer insulating film and said conductive layer wherein said second interlayer insulating film has a third opening;
• and
• a transparent pixel electrode formed over said second interlayer insulating film and electrically connected to said one of the pair of impurity regions via said conductive layer wherein said transparent pixel electrode contacts said conductive layer via said third opening of the second interlayer insulating film,
• wherein said third opening of the second interlayer insulating film overlaps said second opening of the first interlayer insulating film and the first opening of the gate insulating film.

A display device comprising:

• a semiconductor island formed over an insulating surface, said semiconductor island having at least a channel region and a pair of impurity regions of an N-type conductivity or a P-type conductivity;
• a gate insulating film formed over said semiconductor island, the gate insulating film having a first opening;
• a gate electrode comprising molybdenum formed over said channel region with said gate insulating film interposed therebetween wherein said pair of impurity regions are formed in a self-alignment manner with said gate electrode as a mask;
• a first interlayer insulating film formed over said gate electrode and said semiconductor island, said first interlayer insulating film having a second opening;
• a conductive layer contacting one of said pair of impurity regions via the first opening of the gate insulating film and said second opening of the first interlayer insulating film;
• a second interlayer insulating film comprising an organic resin and covering said first interlayer insulating film and said conductive layer wherein said second interlayer insulating film has a third opening;
• and
• a transparent pixel electrode formed over said second interlayer insulating film and electrically connected to said one of the pair of impurity regions via said conductive layer wherein said transparent pixel electrode contacts said conductive layer via said third opening of the second interlayer insulating film,
• wherein said third opening of the second interlayer insulating film completely covers said second opening of the first interlayer insulating film and the first opening of the gate insulating film.