Method and apparatus for solution processed doping of carbon nanotube
AssigneeInternational Business Machines Corporation
InventorsAli Afzali-Ardakani, Phaedon Avouris, Jia Chen, Christian Klinke, Paul M. Solomon
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Abstract
A method is provided for doping a carbon nanotube. The method comprises exposing the nanotube to a one-electron oxidant in a solution phase. A method is also provided for forming a carbon nanotube FET device.
Claims27
A method for doping a carbon nanotube comprising:
- exposing the carbon nanotube to a one-electron oxidant in a solution, such that one electron is transferred from the carbon nanotube to each molecule of the one-electron oxidant.
A carbon nanotube field-effect transistor (FET) device comprising:
- a gate;
- a gate dielectric deposited on the gate;
- a carbon nanotube deposited on the gate dielectric, wherein said carbon nanotube has at least one doped region that is formed by solution processed doping with a one-electron oxidant, such that one electron is transferred from the carbon nanotube to each molecule of the one-electron oxidant;
- a source formed over a first end of the carbon nanotube;
- and
- a drain formed over a second end of the carbon nanotube.
A carbon nanotube field-effect transistor (FET) device comprising:
- a gate;
- a gate dielectnc deposited on the gate;
- a source formed over a first end of the gate dielectric;
- a drain formed over a second end of the gate dielectric;
- and
- a carbon nanotube deposited on the source, the drain and the gate dielectric, wherein said entire carbon nanotube is doped by solution processed doping with a one-electron oxidant, such that one electron is transferred from the carbon nanotube to each molecule of the one-electron oxidant.
A method of forming a carbon nanotube field-effect transistor (FET) device comprising:
- providing a gate;
- depositing a gate dielectric on the gate;
- forming a carbon nanotube on the gate dielectric, wherein said carbon nanotube has at least one doped region that is formed by solution processed doping with a one-electron oxidant, such that one electron is transferred from the carbon nanotube to each molecule of the one-electron oxidant;
- forming a source over a first end of the carbon nanotube;
- and
- forming a drain over a second end of the carbon nanotube.
A method of forming a carbon nanotube field-effect transistor (FET) device comprising:
- providing a gate;
- depositing a gate dielectric on the gate;
- forming a source over a first end of the gate dielectric;
- forming a drain a second end of the gate dielectric;
- and
- forming a carbon nanotube deposited on the source, the drain and the gate dielectric, wherein said entire carbon nanotube is doped by solution processed doping with a one-electron oxidant, such that one electron is transferred from the carbon nanotube to each molecule of the one-electron oxidant.
Dependencies are inferred from the claim text.