Technique for uniformity tuning in an ion implanter system

The method according to 18 further comprising:

• creating a second profile that is a mirror image of the first profile with the desired ion beam profile as mirroring reference;
• tuning the mathematical model to generate the second profile;
• and
• determined the desired velocity profile based at least in part on the tuned mathematical model.

A system for uniformity tuning in an ion implanter system, the system comprising:

• a processor, a beam scan controller, at least one measurement device, and a measurement interface, wherein
• the beam scan controller causes an ion beam to be deflected to a plurality of predetermined locations along a beam path;
• the at least one measurement device measures the ion beam at the plurality of predetermined locations;
• and
• the processor
• receives the ion beam measurements via the measurement interface,
• calculates an ion beam profile along the beam path based at least in part on the ion beam measurements, and
• determines a desired velocity profile along the beam path based at least in part on the calculated ion beam profile such that the ion beam, when scanned according to the desired velocity profile, produces a desired ion beam profile along the beam path.

A system for uniformity tuning in an ion implanter system, the system comprising:

• means for measuring an ion beam at a plurality of predetermined locations along a beam path;
• means for calculating an ion beam profile along the beam path based at least in part on the ion beam measurements at the plurality of predetermined locations;
• and
• means for determining a desired velocity profile along the beam path based at least in part on the calculated ion beam profile such that the ion beam, when scanned according to the desired velocity profile, produces a desired ion beam profile along the beam path.