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US 7,253,122 B2Granted
Systems and methods for forming metal oxides using metal diketonates and/or ketoimines
AssigneeMicron Technology, Inc.
InventorBrian A. Vaartstra
Life of this patent
Estimating the term…
Abstract
A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more precursor compounds that include diketonate ligands and/or ketoimine ligands.
Claims46
A method of manufacturing a semiconductor structure, the method comprising:
- providing a semiconductor substrate or substrate assembly;
- providing at least one precursor compound of the formula LuM1Ox(keto)y (Formula I) and at least one precursor compound of the formula M2Yz (Formula II), wherein:
- M1 and M2 are each independently a metal selected from the group of metals consisting of La, Ce, Pr, Gd, Al, Si, and mixtures thereof;
- each L group is a neutral or anionic supporting ligand;
- each “keto” is independently a dilcetonate or ketoimine ligand;
- each Y group is independently a halogen (X), R1, or an amine of the formula (NR2R3), wherein each R1 is an organic moiety, and each R2 and R3 is independently hydrogen or an organic group;
- n is 0 to 5;
- x is 0 to 3;
- y is 1 to 5 and is dependent on the oxidation state of M1 and on the value of n;
- and
- z is at least one and is dependent on the oxidation state of M2;
- and
- contacting the precursor compounds to form a metal oxide layer on one or more surfaces of the semiconductor substrate or substrate assembly using a vapor deposition process.
10 more elements
A method of manufacturing a semiconductor structure, the method comprising:
- providing a semiconductor substrate or substrate assembly within a deposition chamber;
- providing at least one precursor compound of the formula LnM1Ox(keto)y (Formula I) and at least one precursor compound of the formula M2Yx (Formula II), wherein:
- M1 and M2 are each independently a metal selected from the group of metals consisting of La, Ce, Pr, Gd, Al, Si, and mixtures thereof;
- each L group is a neutral or anionic supporting ligand;
- each “keto” is independently a diketonate or ketoimine ligand;
- each Y group is independently a halogen (X), R1, or an amine of the formula (NR2R3), wherein each R1 is an organic moiety, and each R2 and R3 is independently hydrogen or an organic group;
- n is 0 to 5;
- x is 0 to 3;
- y is 1 to 5 and is dependent on the oxidation state of M1 and on the value of n;
- and
- z is at least one and is dependent on the oxidation state of M2;
- vaporizing the precursor compounds to form vaporized precursor compounds;
- and
- directing the vaporized precursor compounds to the semiconductor substrate or substrate assembly to form a metal oxide dielectric layer on one or more surfaces of the semiconductor substrate or substrate assembly.
11 more elements
A method of forming a metal oxide layer on a substrate, the method comprising:
- providing a substrate;
- providing at least one precursor compound of the formula LnM1Ox(keto)y (Formula I) and at least one precursor compound of the formula M2Yz (Formula II), wherein:
- M1 and M2 are each independently a metal selected from the group of metals consisting of La, Ce, Pr, Gd, Al, Si, and mixtures thereof;
- each L group is a neutral or anionic supporting ligand;
- each “keto” is independently a diketonate or ketoimine ligand;
- each Y group is independently a halogen (X), R1, or an amine of the formula (NR2R3), wherein each R1 is an organic moiety, and each R2 and R3 is independently hydrogen or an organic group;
- n is 0 to 5;
- x is 0 to 3;
- y is 1 to 5 and is dependent on the oxidation state of M1 and on the value of n;
- and
- z is at least one and is dependent on the oxidation state of M2;
- and
- contacting the precursor compounds to form a metal oxide layer on the substrate using a vapor deposition process.
10 more elements
A method of forming a metal oxide layer on a substrate, the method comprising:
- providing a substrate;
- providing at least one precursor compound of the fonnula LnM1Ox(keto)y (Formula I) and at least one precursor compound of the formula M2Yz (Formula II), wherein:
- M2 and M2 are each independently a metal selected from the group of metals consisting of La, Ce, Pr, Gd, Al, Si, and mixtures thereof;
- each L group is a neutral or anionic supporting ligand;
- each “keto” is independently a diketonate or ketoimine ligand;
- each Y group is independently a halogen (X), R1, or an amine of the formula (NR2R3), wherein each R1 is an organic moiety, and each R2 and R3 is independently hydrogen or an organic group;
- n is 0 to 5;
- x is 0 to 3;
- y is 1 to 5 and is dependent on the oxidation state of M1 and on the value of n;
- and
- z is at least one and is dependent on the oxidation state of M2;
- vaporizing the precursor compounds to form vaporized precursor compounds;
- and
- directing the vaporized precursor compounds to the substrate to form a metal oxide layer on the substrate.
11 more elements
A method of manufacturing a memory device structure comprising:
- providing a substrate having a first electrode thereon;
- providing at least one precursor compound of the formula LnM1Ox(keto)y (Formula I) and at least one precursor compound of the formula M2Yz (Formula II), wherein:
- M1 and M2 are each independently a metal selected from the group of metals consisting of La, Ce, Pr, Gd, Al, Si, and mixtures thereof;
- each L group is a neutral or anionic supporting ligand;
- each “keto” is independently a dilcetonate or ketoirnine ligand;
- each Y group is independently a halogen (X), R1, or an amine of the formula (NR2R3), wherein each R1 is an organic moiety, and each R2 and R3 is independently hydrogen or an organic group;
- n is 0 to 5;
- x is 0 to 3;
- y is 1 to 5 and is dependent an the oxidation state of M1 and on the value of n;
- and
- z is at least one and is dependent on the oxidation state of M2;
- vaporizing the precursor compounds to form vaporized precursor compounds;
- directing the vaporized precursor compounds to the substrate to form a metal oxide diclectric layer on the first electrode of the substrate;
- and
- forming a second electrode on the dielectric layer.
12 more elements
Dependencies are inferred from the claim text.