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US 7,253,120 B2Granted
Selectable area laser assisted processing of substrates
AssigneeOrbotech Ltd.
InventorsArie Glazer, Abraham Gross
Life of this patent
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Abstract
A system and method for selectable area laser treatment of a substrate, such as thin film transistors, the system including a holder holding a substrate in proximity to reactant, and laser beams each addressing independently selectable mutually set apart locations on the substrate to induce a reaction between the substrate and the reactant.
Claims36
A method of fabricating thin film transistors, comprising:
- forming at least one semi-conductive film on a substrate;
- immersing said substrate in a dopant;
- and
- independently tilting a plurality of tiltable beam steering elements to deliver a laser beam to a plurality of independently selectable location on said substrate to induce a doping reaction between said dopant and said semi-conductive film at said independently selectable locations.
1 more element
A method of producing thin film transistors on a substrate, comprising:
- generating a laser beam;
- splitting said laser beam into a plurality of selectably positionable sub-beams;
- directing said sub-beams to a plurality of tiltable beam steering elements;
- and
- independently tilting ones of the plurality of tiltable beam steering elements, thereby directing each of said sub-beams to selectable areas on said substrate said selectable areas corresponding to locations whereat said transistors are to be formed, in the presence of a doping gas to induce a doping reaction between said substrate and said doping gas at said selectable areas.
2 more elements
A method of manufacturing an array of thin film transistors, comprising:
- depositing amorphous silicon on a substrate;
- providing a plurality of tiltable beam steering elements;
- independently tilting the plurality of tiltable beam steering elements to direct laser sub-beams to selectable locations on the substrate;
- crystallizing said amorphous silicon to amorphous silicon at the selectable locations with the laser energy of the sub-beams and
- applying P type doping to portions of crystallized silicon by delivering the laser energy of the sub-beams to a plurality of selectable locations in presence of a P type doping agent.
2 more elements
Dependencies are inferred from the claim text.