Methods for use of pulsed voltage in a plasma reactor

An etching method for forming an opening in an insulating material deposited using a plasma enhanced chemical vapor deposition technique for a semiconductor device utilizing a plasma reactor chamber including a pedestal for supporting a semiconductor substrate and a power source in electrical communication with said pedestal, said pedestal including a switch in electrical communication therewith for opening and closing an electrical path, said method comprising:

• placing said semiconductor substrate on said pedestal, said semiconductor substrate having a material layer thereover and a photoresist layer patterned on said material layer;
• generating a plasma above said semiconductor substrate;
• delivering an electrical signal to said pedestal from said power source, wherein a voltage of said electrical signal oscillates between a positive voltage phase having a duration of time and a negative voltage phase having a duration of time;
• delivering a positive voltage spike having a voltage higher than that of the maximum voltage of the positive voltage phase and having a duration of time less than the duration of time of the positive voltage phase to said pedestal during said positive voltage phase, said delivering said positive voltage spike to said pedestal comprising generating a positive voltage spike within a secondary power source and delivering said positive voltage spike to said pedestal during said positive voltage phase when a predetermined voltage level is reached;
• and
• forming at least a portion of an opening in an insulating material.

A method of forming an opening in an insulating material for a semiconductor device utilizing a plasma reactor chamber including a pedestal for supporting a semiconductor substrate and a power source in electrical communication with said pedestal, said pedestal including a switch in electrical communication therewith for opening and closing an electrical path, said method comprising:

• placing said semiconductor substrate on said pedestal, said semiconductor substrate having a material layer thereover and a photoresist layer patterned on said material layer, said material layer deposited by plasma enhanced chemical vapor deposition;
• generating a plasma above said semiconductor substrate;
• delivering an electrical signal to said pedestal from said power source, wherein a voltage of said electrical signal oscillates between a positive voltage phase having a duration of time and a negative voltage phase having a duration of time;
• delivering a positive voltage spike having a voltage higher than that of the maximum voltage of the positive voltage phase and having a duration of time less than the duration of time of the positive voltage phase to said pedestal during said positive voltage phase, said delivering said positive voltage spike to said pedestal comprising generating a positive voltage spike within a secondary power source and delivering said positive voltage spike to said pedestal during said positive voltage phase when a predetermined voltage level is reached;
• and forming at least a portion of an opening in an insulating material.