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AssigneesSTMicroelectronics S.r.l., Ovonyx, Inc.
InventorRomina Zonca
Estimating the term…
The process for forming a film of TiSiN includes the following sequence of steps: deposition of a TiN film at medium temperature, for example, 300-450° C., by thermal decomposition of a metallorganic precursor, for example TDMAT (Tetrakis Dimethylamino Titanium); exposition to a silicon releasing gas, such as silane (SiH4) and dichlorosilane (SiH2Cl2) at 10-90 sccm—standard cube centimeters per minute—for a quite long time, for example, longer than 10 s but less than 90 s, preferably about 40 s; exposition to a H2/N2 plasma at 200-800 sccm, for 10-90 s, preferably about 40 s.
A process for forming a film of TiSiN, comprising:
A process for forming a film of TiSin, comprising:
A process of forming a resistive film comprising:
Dependencies are inferred from the claim text.
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From the US filing history. Foreign family members aren’t listed.
Multistable switching devices, e.g. memristors: based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching: manufacture or…
Device geometry: adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
Electrodes: adapted for resistive heating
Term ended 5 Apr 2025 (estimated)
1. Field of the Invention
The present invention relates to a process for forming a thin film of TiSiN, in particular for phase change memory devices.
2. Description of the Related Art
For the understanding of the present invention, a preferred embodiment is now described, purely as a non-limitative example, with reference to the enclosed drawings, wherein:
FIG. 1 shows the basic structure of a known chalcogenic element;
FIG. 2 shows the plot of the resistivity versus thickness for a film formed according to an embodiment of the invention and a film formed according to the prior art; and
According to one embodiment of the invention, a film of TiSiN is obtained by the following sequence of steps:
1. depositing a TiN film at medium temperature (300-450° C.) by thermal decomposition of a metallorganic precursor, for example TDMAT (Tetrakis Dimethylamino Titanium);
2. exposing the film to a silicon releasing gas, such as silane (SiH4) or dichlorosilane (SiH2Cl2) at 10-90 sccm (standard cubic centimeters per minute) for 10 to 90 seconds, preferably about 40 seconds);