Reliable BEOL integration process with direct CMP of porous SiCOH dielectric

A method of fabricating an interconnect structure comprising:

• providing a structure comprising a porous ultra low k (ULK) dielectric having a dielectric constant of less than 3.0 on a substrate and at least one opening located therein, said porous ULK dielectric is formed by deposition and curing and having about 50% or less of porogen after said curing;
• filling said at least one opening with at least a conductive material;
• planarizing at least said conductive material utilizing a CMP slurry to provide a planarized structure having an upper surface of said conductive material that is substantially coplanar with an upper surface of said ULK dielectric, said ULK dielectric is exposed to said CMP;
• exposing said planarized structure to UV radiation at a temperature from about 200° to about 450° C.;
• subjecting said planarized structure to a plasma preclean process;
• and
• forming a capping layer on at least said conductive material.

A method of fabricating an interconnect structure comprising:

• providing a structure comprising a porous ultra low k (ULK) dielectric having a dielectric constant of less than 3.0 on a substrate, said porous ULK dielectric having at least one opening located therein, and said porous ULK dielectric is formed by providing at least a first precursor comprising atoms of Si, C, O and H and an inert gas into a reactor, depositing said ULK dielectric using said first precursor and thereafter curing;
• filling said at least one opening with at least a conductive material;
• planarizing at least said conductive material utilizing a CMP slurry to provide a planarized structure having an upper surface of said conductive material that is substantially coplanar with an upper surface of said ULK dielectric, said ULK dielectric is exposed to said CMP slurry;
• exposing said planarized structure to UV radiation at a temperature from about 200° to about 450° C.;
• subjecting said planarized structure to a plasma preclean process;
• and
• forming a capping layer on at least said conductive material.