Methods of forming particle-containing materials

#The invention pertains to methods of forming particle-containing materials, and also pertains to semiconductor constructions comprising particle-containing materials.

#Semiconductor device fabrication typically involves formation of multiple layers over a semiconductor substrate. Various methods are known which can be utilized to form the layers, with exemplary methods including atomic layer deposition (ALD), chemical vapor deposition (CVD), and physical vapor deposition (PVD).

#The present invention has particular application to ALD processes. ALD technology typically involves formation of successive atomic layers on a substrate. Such layers may comprise, for example, an epitaxial, polycrystalline, and/or amorphous material. ALD may also be referred to as atomic layer epitaxy, atomic layer processing, etc.

#Preferred embodiments of the invention are described below with reference to the following accompanying drawings.

#FIG. 1 is a diagrammatic, cross-sectional view of a semiconductor wafer fragment at a preliminary processing stage of an exemplary aspect of the present invention.

#FIG. 2 is a view of the FIG. 1 wafer fragment shown at a processing stage subsequent to that of FIG. 1.

#This disclosure of the invention is submitted in furtherance of the constitutional purposes of the U.S. Patent Laws “to promote the progress of science and useful arts” (Article 1, Section 8).

#The invention includes methods by which particles can be incorporated into layers during semiconductor device fabrication. In particular aspects, the particles can have a size from about 100 Å to about 10,000 Å, and in specific aspects the particles can be so-called nanoparticles. The particles can be formed remotely from a semiconductor substrate and then transferred to the substrate. This can allow the particles to be formed in environments particularly well-suited to particle fabrication, and can also allow avoidance of exposure of the semiconductor substrate to the environments utilized for particle formation. The conditions utilized to form the particles can thus be established to be economically highly suited for particle formation. Also, the conditions utilized to form the particles can be established to be conditions which would be detrimental to a semiconductor substrate if the substrate were exposed to such conditions, including, for example, conditions having excessive processing temperatures, pressures, or caustic materials which could damage or destroy features associated with a semiconductor substrate if the substrate were exposed to such conditions.

#A difficulty associated with incorporating particles into semiconductor device features occurs in attempting to adhere the particles to a semiconductor substrate. Specifically, the particles can fall off of a semiconductor substrate if they are not appropriately adhered to the substrate. In particular aspects, the present invention utilizes ALD to form a particle-adhering layer over a semiconductor substrate prior to spreading of the particles onto the semiconductor substrate. In other aspects which could be utilized additionally to, or alternatively to, the above-described process, the invention includes methods in which a particle-adhering coating is provided over particles after spreading the particles across a semiconductor substrate. Exemplary aspects of the invention are described below with reference to FIGS. 1-12.