Methods for cleaning contact openings to reduce contact resistance

A method for processing a semiconductor topography, comprising:

• etching an opening within a dielectric layer to expose a conductive surface;
• removing a photoresist mask used to pattern the opening;
• cleaning the semiconductor topography of residues generated from the step of removing;
• and
• etching metal oxide material formed upon the exposed conductive surface with an etch chemistry comprising hydrogen peroxide and sulfuric acid, wherein the etch chemistry is distinct from chemistries used for the steps of removing and cleaning, and wherein the step of etching comprises removing a sufficient amount of the metal oxide material such that the exposed conductive surface comprises an average surface resistance less than approximately 20 ohms.

A method for processing a semiconductor topography, comprising:

• depositing a dielectric layer upon a metal structure;
• etching a trench within the dielectric layer to expose at least a portion of a metal oxide layer formed upon the metal structure during the step of depositing;
• and
• etching the exposed portion of the metal oxide layer with an etch chemistry comprising sulfuric acid to expose the metal structure, and wherein the step of etching the exposed portion of the metal oxide layer comprises removing a sufficient amount of the metal oxide material such that the exposed portion of the metal structure comprises an average surface resistance less than approximately 20 ohms.