Deposition from liquid sources
AssigneeASM America, Inc.
InventorsMichael A. Todd, Ivo Raaijmakers
Life of this patent
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Abstract
A liquid injector is used to vaporize and inject a silicon precursor into a process chamber to form silicon-containing layers during a semiconductor fabrication process. The injector is connected to a source of silicon precursor, which preferably comprises liquid trisilane in a mixture with one or more dopant precursors. The mixture is metered as a liquid and delivered to the injector, where it is then vaporized and injected into the process chamber.
Claims19
A method for semiconductor fabrication, comprising:
- metering a precursor liquid comprising trisilane as a liquid;
- vaporizing the precursor liquid after metering;
- and
- injecting the vaporized precursor liquid into the process chamber, wherein the precursor liquid comprises trislane and at least one additional precurser.
A method for semiconductor fabrication, comprising:
- metering a precursor liquid comprising trisilane as a liquid:
- vaporizing the precursor liquid after metering:
- and
- injecting the vaporized precursor liquid into the process chamber, wherein injecting comprises exposing a substrate in the process chamber to the vaporized precursor liquid to deposit a silicon-containing film, and wherein the silicon-containing film has a thickness non-uniformity of about 10% or less.
A method for semiconductor fabrication, comprising:
- metering a precursor liquid comprising trisilane as a liquid;
- vaporizing the precursor liquid after metering;
- and
- injecting the vaporized precursor liquid into the process chamber, wherein injecting comprises exposing a substrate in the process chamber to the vaporized precursor liquid to deposit a silicon-containing film, and wherein the silicon-containing film has a step coverage of about 70% or greater.
A method for semiconductor fabrication, comprising:
- metering a precursor liquid comprising trisilane as a liquid;
- vaporizing the precursor liciuid after metering;
- and
- injecting the vaporized precursor liquid into the process chamber, wherein injecting comprises exposing a substrate in the process chamber to the vaporized precursor liquid to deposit a silicon-containing film, and wherein the silicon-containing film has a surface roughness greater than a substrate surface roughness by about 10 Å or less.
A method for semiconductor fabrication, comprising:
- metering a precursor liquid comprising trisilane as a liquid;
- vaporizing the precursor liquid after metering;
- and
- injecting the vaporized precursor liquid into the process chamber, wherein the process chamber is a laminar flow single substrate process chamber.
Dependencies are inferred from the claim text.