US 7,253,072 B2 · Implant optimization scheme

Abstract

The present invention provides a method for implanting ions in a substrate and a method for manufacturing an integrated circuit. The method for implanting ions in a substrate, among other steps, including placing a substrate (410) on an implant platen (405) such that a predominant axes (430) of the substrate (410) is rotated about 30 degrees to about 60 degrees or about 120 degrees to about 150 degrees offset from a radial with respect to the implant platen (405), and further wherein the substrate (410) is not tilted. The method further includes implanting ions into the substrate (410), the rotated position of the predominant axes (430) reducing shadowing.

Claims22

Dependent claims

A method for implanting ions in a substrate, comprising:

placing a substrate on an implant platen such that a predominant axes of the substrate is rotated about 30 degrees to about 60 degrees or about 120 degrees to about 150 degrees offset from a radial with respect to the implant platen, and further wherein the substrate is not tilted;
and
implanting ions into the substrate, the rotated position of the predominant axes reducing shadowing.

Dependencies are inferred from the claim text.

Facts

Application

11/006,257Filed 7 Dec 2004 · us provisional application

Priority

13 May 2004

Published

US 2005/0255683 A117 Nov 2005

Granted

7 Aug 2007

Term ends

Not estimatedThe source records don’t support an estimate.

Classification6 codes

H10P 30/222
Into semiconductor materials, e.g. for doping: characterised by the angle between the ion beam and the crystal planes or the main crystal surface
H10D 30/0221
Of FETs having insulated gates [IGFET]: having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or…
H10D 84/017
The components including complementary IGFETs, e.g. CMOS devices: manufacturing their source or drain regions, e.g. silicided source or drain regions
H10D 84/038
Using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology: using silicon technology, e.g. SiGe

Implant optimization scheme

Life of this patent

Implant optimization scheme

Life of this patent

Abstract

Claims22