Methods for enhancing the formation of nickel mono-silicide by reducing the formation of nickel di-silicide
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorTan-Chen Lee
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Abstract
Methods for reducing stress in silicon to enhance the formation of nickel mono-silicide films formed thereon include a strain compensation source/drain implant process, a silicide formation process on an amorphous silicon layer, a strain compensating buried layer process, a strain compensating dielectric capping layer process during silicide formation, a two cycle anneal process during silicide formation, an excess nickel process to transform NiSi2 to NiSi.
Claims10
A method of fabricating a semiconductor device, the method comprising the steps of:
- providing a substrate;
- doping a silicon or silicon containing region of the substrate with a first dopant, the first dopant creating a stress in the region;
- doping the region with a second dopant that reduces stress in the region caused by the first dopant, the region with the first and second dopants comprising a source/drain region;
- and
- forming a nickel mono-silicide film on the source/drain region.
A method of fabricating a semiconductor device, the method comprising the steps of:
- providing a substrate;
- doping a silicon or silicon containing region of the substrate with a dopant to form a source/drain region, the dopant causing a tensile stress in the region of the substrate;
- forming a nickel film on the region;
- forming a capping layer on the nickel film, the capping layer being selected from a material that compresses the nickel film and the underlying region;
- and
- converting the nickel film to a nickel mono-silicide film.
Dependencies are inferred from the claim text.