Transistor structure with minimized parasitics and method of fabricating the same

A method of forming a bipolar transistor comprising the steps of:

• forming a collector;
• forming an intrinsic base above said collector;
• forming extrinsic base regions separated by an emitter channel, said emitter channel exposing an upper surface of said intrinsic base;
• forming emitter/base spacers on vertical surfaces of each of said extrinsic base regions;
• forming an emitter within said emitter channel, wherein said emitter is recessed below an upper surface of said extrinsic base regions;
• forming an isolation stack atop at least said extrinsic base regions and said emitter;
• forming a dielectric layer atop said isolation stack;
• providing an emitter via through said dielectric layer and said isolation stack to expose said emitter and a portion of said extrinsic base regions;
• and
• forming contact isolation spacers within said emitter via to provide electrical isolation between said recessed emitter and said extrinsic base regions, wherein a portion of said recessed emitter remains exposed.