Self-aligned nanotube field effect transistor and method of fabricating same
AssigneeInternational Business Machines Corporation
InventorsJoerg Appenzeller, Phaedon Avouris, Kevin K. Chan, Philip G. Collins, Richard Martel, Hon-Sum Philip Wong
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Abstract
A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.
Claims9
A method for forming a self-aligned carbon-nanotube field effect transistor semiconductor device comprising the steps of:
- depositing a nanotube on a thermal oxide substrate, wherein the substrate includes an alignment mark;
- forming a metal contact at each end of the nanotube, wherein a first metal contact is a source contact and a second metal contact is a drain contact;
- depositing an amorphous silicon layer over the source contact, the drain contact, and the nanotube;
- oxidizing the amorphous silicon;
- forming nitride spacers on opposing sides of each of the metal contacts;
- depositing a high k dielectric film over the oxidized amorphous silicon and the nitride spacers;
- and
- forming a gate substantially between the source contact and the drain contact, and over the nanotube.
A method for forming a self-aligned carbon-nanotube field effect transistor semiconductor device comprising:
- depositing a nanotube on a thermal oxide substrate, wherein the thermal oxide substrate includes an alignment mark;
- forming a metal contact at each end of the nanotube, wherein a first metal contact is a source contact and a second metal contact is a drain contact;
- forming an oxide layer on the source contact, the drain contact, and the nanotube;
- forming nitride spacers on portions of the oxide layer on side portions of each of the metal contacts;
- depositing a dielectric film on the oxide layer and the nitride spacers;
- and
- forming a gate substantially between the source contact and the drain contact and over the nanotube, the gate separated from the nanotube by the dielectric film and the oxide layer.
Dependencies are inferred from the claim text.