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US 7,253,063 B2Granted
Method of fabricating a composite gate dielectric layer
AssigneeLucent Technologies Inc.
InventorsDavid A Muller, Gregory L. Timp, Glen David Wilk
Life of this patent
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Abstract
A semiconductor device having composite dielectric layer formed between a silicon substrate and a gate electrode. The composite gate dielectric layer including a layer of silicon oxide, SiOx≦2, having a dielectric constant of greater than about 3.9 and about 12 or less, and a complementary dielectric layer for inhibiting the flow of leakage current through the composite dielectric layer.
Claims26
A method of fabricating a composite gate dielectric layer comprising the step of:
- forming a complementary dielectric layer upon a layer of silicon oxide, SiOx<2, the layer of silicon oxide formed on a silicon substrate and having a thickness of less than about Å and a dielectric constant greater than about 3.9 and less than about 12, wherein step of forming a complementary dielectric layer upon a layer of silicon oxide comprises the steps of:
- forming a first monolayer of oxygen upon a silicon substrate by at least one of atomic layer chemical vapor deposition, metal organic chemical vapor deposition or low pressure chemical vapor deposition;
- forming a monolayer of silicon upon the first monolayer of oxygen by at least one of atomic layer chemical vapor deposition, metal organic chemical vapor deposition or low pressure chemical vapor deposition;
- forming a second monolayer of oxygen upon the monolayer of silicon by at least one of atomic layer chemical vapor deposition, metal organic chemical vapor deposition or low pressure chemical vapor deposition;
- and
- growing the complementary dielectric layer upon the second monolayer of oxygen.
3 more elements
A method of fabricating a composite dielectric layer comprising:
- forming a complementary dielectric layer for inhibiting leakage current flow on a layer of silicon oxide, SiOx<2, the layer of silicon oxide formed on a silicon substrate and having a dielectric constant greater than about 3.9 and less than about 12 and thickness of less than about 5 Å, wherein step of forming a complementary dielectric layer on a layer of silicon oxide comprises the steps of:
- forming a first monolayer of oxygen on a silicon substrate by at least one of atomic layer chemical vapor deposition, metal organic chemical vapor deposition or low pressure chemical vapor deposition;
- forming a monolayer of silicon on the first monolayer of oxygen by at least one of atomic layer chemical vapor deposition, metal organic chemical vapor deposition or low pressure chemical vapor deposition;
- forming a second monolayer of oxygen on the monolayer of silicon by at least one of atomic layer chemical vapor deposition, metal organic chemical vapor deposition or low pressure chemical vapor deposition;
- and
- growing the complementary dielectric layer on the second monolayer of oxygen.
3 more elements
A method of fabricating a composite dielectric layer comprising:
- forming a layer of silicon oxide, SiOx<2, on a silicon substrate and having a dielectric constant greater than about 3.9 and less than about 12, the step of forming the layer of silicon oxide, SiOx<2 comprising:
- forming a first monolayer of oxygen by at least one of atomic layer chemical vapor deposition, metal organic chemical vapor deposition and low pressure chemical vapor deposition;
- forming a monolayer of silicon on the first monolayer of oxygen by at least one of atomic layer chemical vapor deposition, metal organic chemical vapor deposition or low pressure chemical vapor deposition;
- forming a second monolayer of oxygen on the monolayer of silicon by at least one of atomic layer chemical vapor deposition, metal organic chemical vapor deposition or low pressure chemical vapor deposition;
- and
- forming a complementary dielectric layer on the second monolayer of oxygen.
3 more elements
A method of fabricating a composite gate dielectric layer, the method comprises:
- forming a complementary dielectric layer upon a layer of silicon oxide, SiOx=2, the layer of silicon oxide formed on a silicon substrate and having a thickness of less than about 4 Å and a dielectric constant greater than about 3.9 and less than about 12, wherein forming a complementary dielectric layer upon a layer of silicon oxide further comprises:
- forming a first monolayer of oxygen upon a silicon substrate by at least one of atomic layer chemical vapor deposition, metal organic chemical vapor deposition or low pressure chemical vapor deposition;
- forming a monolayer of silicon upon the first monolayer of oxygen by at least one of atomic layer chemical vapor deposition, metal organic chemical vapor deposition or low pressure chemical vapor deposition;
- forming a second monolayer of oxygen upon the monolayer of silicon by at least one of atomic layer chemical vapor deposition, metal organic chemical vapor deposition or low pressure chemical vapor deposition;
- and
- growing the complementary dielectric layer upon the second monolayer of oxygen.
3 more elements
A method of fabricating a composite dielectric layer comprising:
- forming a complementary dielectric layer for inhibiting leakage current flow on a layer of silicon oxide, SiOx=2, the layer of silicon oxide formed on a silicon substrate and having a dielectric constant greater than about 3.9 and less than about 12 and thickness of less than about 4 Å, wherein forming a complementary dielectric layer on a layer of silicon oxide further comprises:
- forming a first monolayer of oxygen on a silicon substrate by at least one of atomic layer chemical vapor deposition, metal organic chemical vapor deposition or low pressure chemical vapor deposition;
- forming a monolayer of silicon on the first monolayer of oxygen by at least one of atomic layer chemical vapor deposition, metal organic chemical vapor deposition or low pressure chemical vapor deposition;
- forming a second monolayer of oxygen on the monolayer of silicon by at least one of atomic layer chemical vapor deposition, metal organic chemical vapor deposition or low pressure chemical vapor deposition;
- and
- growing the complementary dielectric layer on the second monolayer of oxygen.
3 more elements
A method of fabricating a composite dielectric layer comprising:
- forming a layer of silicon oxide, SiOx=2, on a silicon substrate and having a dielectric constant greater than about 3.9 and less than about 12 and having a thickness of less than about 4 Å, the step of forming the layer of silicon oxide, SiOx=2 comprising:
- forming a first monolayer of oxygen by at least one of atomic layer chemical vapor deposition, metal organic chemical vapor deposition or low pressure chemical vapor deposition;
- forming a monolayer of silicon on the first monolayer of oxygen by at least one of atomic layer chemical vapor deposition, metal organic chemical vapor deposition or low pressure chemical vapor deposition;
- forming a second monolayer of oxygen on the monolayer of silicon by at least one of atomic layer chemical vapor deposition, metal organic chemical vapor deposition or low pressure chemical vapor deposition;
- and
- forming a complementary dielectric layer on the second monolayer of oxygen.
3 more elements
Dependencies are inferred from the claim text.