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US 7,253,062 B2Granted
Semiconductor device with asymmetric pocket implants
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYin-Pin Wang, Chin-Sheng Chang
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Abstract
A semiconductor device (1) has a source (2) a gate (3) and a drain (4), a single deep-pocket ion implant (8) in a source-drain depletion region, and a single shallow-pocket ion implant (9) in the source-drain depletion region.
Claims5
A method of fabricating a semiconductor device with asymmetric ion implants comprising the steps of:
- implanting primary and secondary deep-pocket ion implants in a source-drain depletion region;
- implanting primary and secondary shallow-pocket ion implants in the source-drain depletion region;
- and
- countering the secondary deep-pocket ion implant and the secondary shallow-pocket ion implant.
1 more element
Dependencies are inferred from the claim text.