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US 7,253,045 B1Granted
Selective P-channel VT adjustment in SiGe system for leakage optimization
AssigneeAdvanced Micro Devices, Inc.
InventorsDerick J. Wristers, David Wu, Hormuzdiar E. Nariman
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Abstract
A method of manufacturing a semiconductor device includes forming a silicon germanium layer and a N-channel transistor and a P-channel transistor over the silicon germanium layer. A beta ratio of the N-channel transistor to the P-channel transistor is about 1.8 to about 2.2. A semiconductor device is also disclosed.
Claims7
A method of forming a semiconductor device, comprising the steps of:
- forming a silicon germanium layer;
- forming a N-channel transistor over the silicon germanium layer;
- and
- forming a P-channel transistor over the silicon germanium layer, wherein
- a beta ratio of the N-channel transistor to the P-channel transistor is about 1.8 to about 2.2 and
- the P-channel transistor includes source/drain regions implanted with a P-type dopant, and the implant energies and dosages for the P-type dopant range respectively from about 1 keV to about 10 keV and from about 1×1014 to about 5×1015 dopants/cm2.
3 more elements
A semiconductor device, comprising:
- a silicon-germanium layer;
- a N-channel transistor over the silicon germanium layer;
- and
- a P-channel transistor over the silicon germanium layer, wherein
- a beta ratio of the N-channel transistor to the P-channel transistor is about 1.8 to about 2.2,
- wherein the P-channel transistor includes source/drain regions implanted with a P-type dopant, and the implant energies and dosages for the P-type dopant range respectively from about 1 keV to about 10 keV and from about 1×1014 to about 5×1015 dopants/cm2.
3 more elements
A method of forming a semiconductor device, comprising the steps of:
- forming a silicon germanium layer;
- forming N-channel devices over the silicon germanium layer;
- forming P-channel devices over the silicon germanium layer;
- and
- adjusting VT of the P-channel devices,
- wherein a beta ratio of the N-channel devices to the adjusted P-channel devices is about 1.8 to about 2.2 and
- the VT of the P-channel devices is adjusted by implanting source/drain regions of the P-channel devices with a P-type dopant, and the implant energies and dosages for the P-type dopant range respectively from about 1 keV to about 10 keV and from about 1×1014 to about 5×1015 dopants/cm2.
4 more elements
Dependencies are inferred from the claim text.