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US 7,253,041 B2Granted
Method of forming a thin film transistor
AssigneeAu Optronics Corporation
InventorsFeng-Yuan Gan, Han-Tu Lin
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Abstract
A method of forming a thin film transistor comprising a deposition procedure of a microcrystal material layer and performing a plasma treatment procedure. The deposition procedure and the plasma treatment procedure are repeated. A buffer layer is thus formed on the gate electrode.
Claims19
A method of forming a thin film transistor, comprising:
- providing a substrate;
- forming a gate electrode on the substrate;
- forming a microcrystal material layer on the gate electrode;
- performing a plasma treatment to transfer the microcrystal material layer into a buffer layer;
- forming a gate insulating layer on the buffer layer;
- forming an active channel layer on the gate insulating layer;
- forming a source and a drain on the active channel layer;
- and
- forming a source electrode and a drain electrode contacting the source and the drain respectively.
6 more elements
A method of forming a thin film transistor, comprising:
- providing a substrate;
- forming a gate electrode on the substrate;
- performing a deposition procedure and a plasma treatment procedure of a microcrystal material layer on the gate electrode under a vacuum system, the deposition procedure and the plasma treatment procedure being repeated to form a buffer layer covering the gate electrode;
- depositing a gate insulating layer, a semiconductor layer and a first conductive type semiconductor layer on the buffer layer without breaking the vacuum system;
- forming a metal layer on the first conductive type semiconductor layer;
- and
- defining the metal layer and the first conductive type semiconductor layer to form a source electrode, a drain electrode, a source and a drain.
4 more elements
Dependencies are inferred from the claim text.