Thin film transistor array panel and manufacturing method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorSang-Ki Kwak
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Abstract
A method of manufacturing a thin film transistor array panel is provided, which includes: forming a gate line on a substrate; forming a gate insulating layer; forming a semiconductor layer; forming a lower data line; forming an upper data line including a source electrode and a drain electrode, the upper data line including a portion disposed on the semiconductor layer without interposing the lower data line; forming a passivation layer having a first contact hole exposing the drain electrode at least in part; and forming a pixel electrode on the first contact hole to contact the drain electrode.
Claims14
A method of manufacturing a thin film transistor array panel, the method comprising:
- forming a gate line on a substrate;
- forming a gate insulating layer;
- forming a semiconductor layer;
- forming a lower data line;
- forming an upper data line including a source electrode and a drain electrode, the upper data line including a portion disposed on the semiconductor layer without interposing the lower data line;
- forming a passivation layer having a first contact hole exposing the drain electrode at least in part;
- and
- forming a pixel electrode on the first contact hole to contact the drain electrode.
Dependencies are inferred from the claim text.