Method of flattening a crystallized semiconductor film surface by using a plate
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Koichiro Tanaka
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Abstract
First laser light is irradiated (energy density of 400 to 500 mj/cm2) to a semiconductor film 102 in an atmosphere containing oxygen in order to obtain a semiconductor film 102b having large depressions and projections on the surface. Then, an oxidized film 105a formed by the irradiation of the first laser light is removed. After that, an inert gas with an oxygen density of 10 ppm or below is blown thereto, and, at the same time, second laser light is irradiated thereto (the energy density is higher than that of the irradiation of the first laser light). Thus, the surface of the semiconductor film 102b is flattened, and a semiconductor film 102c having fewer depressions and projections on the surface can be obtained.
Claims46
A method for manufacturing a semiconductor device comprising:
- forming a semiconductor film on an insulating surface;
- crystallizing the semiconductor film;
- and
- flattening a surface of the crystallized semiconductor film by blowing an inert gas injected from a plate to the crystallized semiconductor film without intrusion of the air and irradiating a laser light thereto,
- wherein the plate is located above the semiconductor film, and
- wherein the plate has an opening portion through which the laser light passes.
A method for manufacturing a semiconductor device comprising:
- forming a semiconductor film on an insulating surface;
- irradiating a laser light to the semiconductor film and forming a crystallized semiconductor film and an oxidized film on the crystallized semiconductor film;
- removing the oxidized film;
- and
- blowing an inert gas injected from a plate to the crystallized semiconductor film without intrusion of the air and, at the same time, irradiating a laser light thereto in order to flatten a surface of the crystallized semiconductor film,
- wherein the plate is located above the semiconductor film, and
- wherein the plate has an opening portion through which the laser light passes.
A method of manufacturing a semiconductor device comprising:
- forming a semiconductor film on an insulating surface;
- irradiating a laser light to the semiconductor film and forming a crystallized semiconductor film and an oxidized film on the crystallized semiconductor film;
- oxidizing a surface of the crystallized semiconductor film by using solution containing ozone;
- removing the oxidized film;
- and
- blowing an inert gas injected from a plate to the crystallized semiconductor film without intrusion of the air and, at the same time, irradiating a laser light thereto in order to flatten the surface of the crystallized semiconductor film,
- wherein the plate is located above the semiconductor film, and
- wherein the plate has an opening portion through which the laser light passes.
A method for manufacturing a semiconductor device comprising:
- forming a semiconductor film on an insulating surface;
- irradiating a laser light to the semiconductor film and forming a crystallized semiconductor film;
- and
- blowing an inert gas injected from a plate to the crystallized semiconductor film without intrusion of the air and, at the same time, irradiating a laser light thereto in order to flatten a surface of the crystallized semiconductor film,
- wherein the plate is located immediately above the semiconductor film, and
- wherein the plate has an opening portion through which the laser light passes.
A method for manufacturing a semiconductor device comprising:
- forming a semiconductor film on an insulating surface;
- and
- blowing an inert gas or a gas containing oxygen injected from a plate to the semiconductor film without intrusion of the air and, at the same time, irradiating a laser light thereto in order to flatten a surface of the semiconductor film,
- wherein the plate is located immediately above the semiconductor film, and
- wherein the plate has an opening portion through which the laser light passes.
Dependencies are inferred from the claim text.