Positive resist composition and method of pattern formation using the same
AssigneeFUJIFILM Corporation
InventorsTsukasa Yamanaka, Kenichiro Sato
Life of this patent
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Abstract
A positive resist composition comprising: at least two resins which differ in glass transition temperature by at least 5° C.; and a compound which generates an acid upon irradiation with actinic rays or radiation, wherein each of the two resins comprises at least either of a repeating unit derived from an acrylic acid derivative monomer and a repeating unit derived from an methacrylic acid derivative monomer and further comprises an alicyclic structure and at least one group that increases a solubility of the resin in alkaline developer by the action of an acid.
Claims8
A positive resist composition comprising:
- at least two resins, each comprising:
- at least one of a repeating unit derived from an acrylic acid derivative monomer and a repeating unit derived from a methacrylic acid derivative monomer;
- an alicyclic structure;
- and at least one group that increases solubility of each of the at least two resins in alkaline developer by the action of an acid;
- and
- a compound which generates an acid upon irradiation with actinic rays or radiation,
- wherein a first resin of the at least two resins has a glass transition temperature different from that of a second resin of the at least two resins by at least 5° C.,
- wherein each of the first and second resins comprises at least one repeating unit selected from the group consisting of repeating units represented by formula (A1) and repeating units represented by formula (A2):
- wherein in formula (A1), R represents a hydrogen atom, a hydroxyl group, a halogen atom, or an alkyl group having 1 or 2 carbon atoms, provided that the R's are the same or different;
- and
- in formula (A2), R represents a hydrogen atom, a hydroxyl group, a halogen atom, or an alkyl group having 1 to 4 carbon atoms, provided that the R's are the same or different;
- A is a single bond or represents one group or a combination of two or more groups selected from the group consisting of alkylene, ether, thioether, carbonyl, ester, amide, sulfonamide, urethane and urea groups;
- and
- W1 represents an alkylene group.
A method of pattern formation comprising:
- forming a photoresist film on a semiconductor substrate with a positive resist composition comprising:
- at least two resins, each comprising:
- at least one of a repeating unit derived from an acrylic acid derivative monomer and a repeating unit derived from a methacrylic acid derivative monomer;
- an alicyclic structure;
- and at least one group that increases solubility of each of the at least two resins in alkaline developer by the action of an acid;
- and
- a compound which generates an acid upon irradiation with actinic rays or radiation,
- wherein a first resin of the at least two resins has a glass transition temperature different from that of a second resin of the at least two resins by at least 5° C.;
- subjecting the photoresist film to pattern-wise exposure with at least one of:
- radiation having a wavelength of 200 nm or shorter;
- electron beams;
- X-rays;
- and ion beams;
- heating the photoresist film;
- developing the photoresist film to form a contact hole pattern having a hole size larger than a desired size;
- and
- heating the semiconductor substrate to a temperature of from 120 to 200° C. to cause the contact hole pattern to flow thermally and thereby form a contact hole pattern having the desired hole size.
Dependencies are inferred from the claim text.