Forming a passivating aluminum fluoride layer and removing same for use in semiconductor manufacture

A process for cleaning residue from an aluminum-containing substrate, which comprises:

• contacting the aluminum-containing substrate with a first composition which removes residue from the substrate and which forms a passivating layer on the substrate, wherein the first composition comprises between about 50% and about 85% water, between about 15% to about 50% organic solvent, and between about 0.01% and about 5% of one or more fluoride compounds, by weight;
• and
• contacting the aluminum-containing substrate with a second composition which removes remaining residue from the substrate, wherein the second composition comprises between about 10% and about 50% water, between about 50% and about 85% organic solvent;
• and between about 0.01% and about 5% of one or more fluoride compounds, by weight, wherein the first composition and the second composition are not the same.