Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride
AssigneesAmmono Sp. z o.o., Nichia Corporation
InventorsRobert Tomasz Dwilinski, Roman Marek Doradzinski, Leszek Piotr Sierzfutowski, Jerzy Garczynski, Yasuo Kanbara
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Abstract
The present invention refers to an ammonobasic method for preparing a gallium-containing nitride crystal, in which gallium-containing feedstock is crystallized on at least one crystallization seed in the presence of an alkali metal-containing component in a supercritical nitrogen-containing solvent. The method can provide monocrystalline gallium-containing nitride crystals having a very high quality.
Claims20
A process for obtaining a bulk monocrystalline gallium-containing nitride crystal, wherein it is performed in an autoclave, in the environment of a supercritical solvent containing ions of alkali metals, wherein a gallium-containing feedstock for making said gallium-containing nitride crystal becomes dissolved in said supercritical solvent to form a supercritical solution, and the gallium-containing nitride becomes crystallized from the supercritical solution on the surface of a crystallization seed at a temperature higher and/or pressure lower than that of the feedstock dissolution in the supercritical solvent.
An apparatus for obtaining of a monocrystalline gallium-containing nitride crystal, comprising an autoclave for producing supercritical solvent, equipped with installation for establishing a convection flow, the autoclave being mounted inside a furnace or set of furnaces which are equipped with heating devices and/or cooling devices,
- wherein said furnace or set of furnaces has a high-temperature zone coinciding with the crystallization zone of said autoclave equipped with heating devices and/or cooling devices, as well as a low-temperature zone coinciding with the dissolution zone of the autoclave equipped with heating devices and/or cooling devices,
- wherein feedstock is placed in the autoclave in the dissolution zone, and said a crystallization seed is placed in the crystallization zone, and said convection flow between the zones is established by said installation, and
- wherein said dissolution zone is located above said horizontal baffle or horizontal baffles, whereas said crystallization zone is located below said horizontal baffle or horizontal baffles.
Dependencies are inferred from the claim text.