Alloy type semiconductor nanocrystals and method for preparing the same

A method for preparing semiconductor nanocrystals comprising:

• (a) mixing one or more Group 12 metals or Group 12 precursors with a dispersing agent selected from one or more of the group consisting of an alkylcarboxylic acid having from 2 to 18 carbon atoms, an alkenylcarboxylic acid having from 2 to 18 carbon atoms, an alkylsulfonic acid having from 2 to 18 carbon atoms, an alkenylsulfonic acid having from 2 to 18 carbon atoms, an alkylamine having from 2 to 18 carbon atoms, an alkenylamine having from 2 to 18 carbon atoms, hexyl phosphoric acid, n-octyl phosphoric acid, tetradecyl phosphoric acid, and octadecyl phosphoric acid, and a solvent selected from one or more of the group consisting of a primary alkyl amine, a secondary alkyl amine, a tertiary alkyl amine, a nitrogen-containing hetero ring compound, a sulfur-containing hetero ring compound, alkane of 6 to 22 carbon atoms, alkene of 6 to 22 carbon atoms, and alkyne of 6 to 22 carbon atoms wherein the molar ratio of the Group 12 metal or Group 12 metal precursor to the dispersing agent is in the range of 1:0.1 to 1:100 followed by heating to obtain a Group 12 metal precursor solution;
• (b) dissolving one or more Group 16 elements or Group 16 precursors in a coordinating solvent selected from one or more of the group consisting of a primary alkyl amine, a secondary alkyl amine, a tertiary alkyl amine, a nitrogen-containing hetero ring compound, a sulfur-containing hetero ring compound, alkane of 6 to 22 carbon atoms, alkene of 6 to 22 carbon atoms, and alkyne of 6 to 22 carbon atoms to obtain a Group 16 element precursor solution wherein the molar ratio of the Group 16 element or Group 16 precursor to solvent is in the range of 0.1:1 to 1:100;
• and
• (c) mixing the Group 12 metal precursors solution and the Group 16 element precursors solution to form a mixture, and then reacting the mixture to grow the semiconductor nanocrystals.