Semiconductor memory and data read method of the same

A data read method of a semiconductor memory, wherein, when reading out data from a semiconductor memory comprising:

• a memory cell array in which a plurality of memory cells each holding data made up of first data and second data are arranged at least along a column direction;
• a plurality of word lines running along a row direction in the memory cell array, and connected to the memory cells;
• a first bit line which runs along the column direction in the memory cell array and is connected to the memory cells, and to which the first data is read out from the memory cell when the data is read out from the memory cell;
• and
• a second bit line which runs along the column direction in the memory cell array and is connected to the memory cells, and to which the second data is read out from the memory cell when the data is read out from the memory cell,
• the method comprises:
• when detecting that an electric potential of one of the first and second bit lines changes from a first potential to a second potential lower than the first potential after the data is read out from the memory cell, changing an electric potential of the other bit line from the second potential to the first potential;
• if the electric potential of the selected one of the first and second bit lines changes from the first potential to the second potential when the data is read out, selecting the other bit line when the data is to be read out next, and, if the electric potential of the selected one of the first and second bit lines maintains the first potential, keeping selecting the selected bit line even when the data is to be read out next;
• and
• reading out the first or second data from one or the other bit line selected.