Spin-injection FET

A spin-injection field effect transistor comprising:

• first and second source/drain diffusion layers;
• a first ferromagnetic layer which is formed on the first source/drain diffusion layer, a magnetization direction of the first ferromagnetic layer being fixed;
• a second ferromagnetic layer which is formed on the second source/drain diffusion layer, a magnetization direction of the second ferromagnetic layer being changed;
• a tunnel barrier layer which is provided in at least one of a section between the first source/drain diffusion layer and the first ferromagnetic layer and a section between the second source/drain diffusion layer and the second ferromagnetic layer;
• a channel which is located between the first and second source/drain diffusion layers;
• a gate insulating layer which is formed on the channel;
• and
• a gate electrode which is formed on the gate insulating layer.